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    Topic areas

    The conference objective is to gather the most recent advances in the field of the electronic devices. In particular:


    • Materials and process technology: Fabrication technologies of bulk materials (Czochralski, Bridgman, etc) and materials on surface (LPE, MBE, MOVPE... ). Semiconductor material development. Organic materials. Process technologies and simulation: bulk substrates treatment, photolitography, e-beam lithography, etching, FIB, diffusion, ion implantation, insulator and metal deposition, ohmic contacts, etc.
    • Device modeling and simulation:Statistical, analytical and numerical models of electronic, optical and physical properties of the devices: Including physical model and equivalent electrical circuit model of the devices and interconnections.
    • Characterization and reliability: Characterisation of useful materials for semiconductor devices (SIMS, XPS, photo-luminescence, Hall effect, X ray diffractometry, microscopy, Auger, RBS, etc.) and device characterization (quantum efficiency, I-V and C-V plots, TLM, etc.). Device reliability, fault analysis, electro-migration, real time and fast degradation experiments, etc.


    • Sensors, actuators and micro/nano systems: Integration of devices and structures in sensor, actuator and MEMS development. Bio-detection, molecular, physical, chemical, integrated sensors, and micro-optical devices and micro-energetic generators. Heterogeneous integration for energy harvesting and photonics
    • Photovoltaic and optoelectronic devices and displays: Silicon, III-V, II-VI, organic and intermediate band semiconductors photocells. Other photovoltaic devices: thermo-photovoltaic, monochromatic light converters, etc. Optoelectronic devices: LEDs, LASER, modulators and photonic crystals. CCD, TFT, LCD, amorphous, polycrystalline and organic displays.
    • Emerging devices:Nanoelectronic devices and structures: nanotubes, nanowires and quantum dots. Bio-electronics. Magnetic, nanophotonic, spintronic and molecular devices. Terahertz devices.
    • RF, microwave and power devices: Discrete and integrated high power/voltage/current devices and RF devices: FETs, HBTs, microwave devices, commutators, capacitors and inductances.