Modeling and devices simulation

  • 16:00 High-Performance In0.75Ga0.25As Implant-free n-Type MOSFETs for Low Power Applications
    • Jason Ayubi-Moak (University of Glasgow), Karol Kalna (University of Glasgow), Asen Asenov (University of Glasgow).
  • 16:20 Effect of traps in the performance of Four Gate Transistor
    • Abraham Luque Rodríguez (Universidad de Granada), Juan Antonio Jimenez Tejada (Universidad de Granada), Andrés Gogoy Medina (Universidad de Granada), Juan Antonio Lopez Villanueva (Universidad de Granada), Salvador Rodríguez Bolivar (Universidad de Granada), Francisco Manuel Gomez Campos (Universidad de Granada).
  • 16:40 Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
    • Manuel Aldegunde (Universidad de Santiago de Compostela), Antonio J. García-Loureiro (Universidad de Santiago de Compostela), Natalia Seoane (Universidad de Santiago de Compostela), Asen Asenov (University of Glasgow), Karol Kalna (University of Glasgow).
  • 17:00 Current drive in n- type Schottky Barrier MOSFETs: a Monte Carlo study
    • Elena Pascual (Universidad de Salamanca), Raúl Rengel (Universidad de Salamanca), María Jesús Martín (Universidad de Salamanca).
  • 17:20 Simulation Methods for Ionizing Radiation Single Event Effects Evaluation
    • Pablo Fernandez-Martínez (Instituto de Microelectrónica de Barcelona (CSIC)), Juan Manuel Mogollón (Universidad de Sevilla), Salvador Hidalgo (Instituto de Microelectrónica de Barcelona (CSIC)), Francisco Rogelio Palomo (Universidad de Sevilla), David Flores (Instituto de Microelectrónica de Barcelona (CSIC)), Miguel Angel Aguirre (Universidad de Sevilla).
  • 17:40 Analytical Modeling of Effective Conduction Path Effect (ECPE) on the Subthreshold Swing of DG-MOSFETs
    • Pramod Kumar Tiwari (Banaras Hindu University), Chinmaya Ranjan Panda (Banaras Hindu University), Anupam Agarwal (Banaras Hindu University), Prateek Sharma (Banaras Hindu University), Satyabrata Jit (Banaras Hindu University).