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Poster Session - Materials, technology and process simulation. Modeling and devices simulation

  • Modeling and simulation of CMOS APS
    • Beatriz Blanco-Filgueira (University of Santiago de Compostela), Paula López (University of Santiago de Compostela), Diego Cabello (University of Santiago de Compostela), J. Ernst (Fraunhofer Institut fuer Integrierte Schaltungen), H. Neubauer (Fraunhofer Institut fuer Integrierte Schaltungen), Johann Hauer (Franhofer Institut fuer Integrierte Schaltungen).
  • Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAs
    • Santiago Silvestre (MNT-DEE-UPC), Joaquim Puigdollers (MNT-DEE-UPC), Alfredo Boronat (MNT-DEE-UPC), Luis Castañer (MNT-DEE-UPC).
  • 3D Drift-Diffusion Simulation with Quantum-Corrections of Tri-Gate MOSFETs
    • Antonio Garcia-Loureiro (USC), Manuel Aldegunde (USC), Natalia Seoane (USC), Karol Kalna (Univ. of Glasgow), Asen Asenov (Univ. of Glasgow).
  • Enclosed layout transistors in saturation
    • Paula López Martínez (University of Santiago de Compostela), Beatriz Blanco Filgueira (University of Santiago de Compostela), Diego Cabello Ferrer (University of Santiago de Compostela), Johann Hauer (Fraunhofer Institute for Integrated Circuits).
  • Logarithmic Compensated Voltage Reference
    • Cosmin Popa (UPB).
  • Comparison of bulk micromachined high voltage light scavengers
    • Sandra Bermejo (Universitat Politecnica de Catalunya (UPC)), Pablo Ortega (UPC), Luis Castañer (UPC).
  • Density of states in organic semiconductors from TFTs electrical measurements
    • Joaquim Puigdollers (Univeristat Politecnica Catalunya), Monica Della Pirriera (Universitat Politecnica Catalunya), Albert Marsal (Univeristat Politecnica Catalunya), Pablo Ortega (Univeristat Politecnica Catalunya), Albert Orpella (Univeristat Politecnica Catalunya), Cristóbal Voz (Universitat Politecnica Catalunya), Stephanie Cheylan (Institut de Ciences Fotoniques), Ramón Alcubilla (Univesistat Politecnica Catalunya).
  • Analytical Model for Collector Current Gummel Plots of Heterojunction Bipolar Transistors
    • Dan Sachelarie (Valahia University of Targoviste), Gabriel Predusca (Valahia University of Targoviste).
  • Design of an integrated 2x4 decoder based on the quantum well MODFET to
    • Pejman Shabani (Shahid Chamran University).
  • Design and simulation of a novel nano structure quantum well voltage
    • Pejman Shabani (Shahid Chamran University), Jabar Ganji (Mahshahr Eslamic Azad University).
  • Negative capacitance effect for low-power switching
    • David Jiménez Jiménez (Universitat Autònoma de Barcelona).
  • Atomistic simulations of the effect of implant parameters on Si damage
    • Pedro Lopez (Universidad de Valladolid), Lourdes Pelaz (Universidad de Valladolid), Luis A. Marqués (Univsersidad de Valladolid), María Aboy (Universidad de Valladolid), Iván Santos (Universidad de Valladolid).
  • Interlayer between Al-doped ZnO and a commercial solar cell Si substrate studied by PES
    • Mercedes Gabás (University of Málaga), Nicholas T. Barrett (C.E.A.), José Ramón Ramos-Barrado (University of Málaga), Susana Gota (C.E.A.), Mª Cruz López-Escalante (ISOFOTON).
  • Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
    • Salvador Dueñas (Universidad de Valladolid), Helena Castán (Universidad de Valladolid), Héctor García (Universidad de Valladolid), Alfonso Gomez (Universidad de Valladolid), Luis Bailón (Universidad de Valladolid), María Toledano-Luque (Universidad Complutense), Álvaro del Prado (Universidad Complutense), Ignacio Mártil (Universidad Complutense), G. González-Díaz (Universidad Complutense).
  • Comparison of static angle change and relaxation in EWOD devices
    • Vito di Virgilio (Universitat Politecnica de Catalunya), Luis Castañer (Universitat Politecnica de Catalunya).
  • Analytical Modeling of a Novel Heterojunction Bipolar Transistor Structure
    • Sukla Basu (Kalyani Government Engineering College).
  • Accurate prediction of the gate tunneling current for double gate MOSFETs
    • Ferney Alveiro Chaves Romero (UNIVERSIDAD AUTONOMA DE BARCELONA).
  • Circuit-design oriented modelling of the recovery BTI component and post-BD gate current
    • Javier Martin-Martinez (Universitat Autònoma de Barcelona), Ben Kaczer (IMEC), Joan Boix (Universitat Autònoma de Barcelona), Nuria Ayala (Universitat Autònoma de Barcelona), Rosana Rodriguez (Universitat Autònoma de Barcelona), N. Nafria, X. Aymerich, P. Zuber, B. Dierickx, G. Groeseneken.
  • Improvement of the k•p Approach for Describing Silicon Quantum Dots
    • Salvador Rodríguez-Bolívar (Universidad de Granada), Francisco M. Gómez-Campos (Universidad de Granada), Abraham Luque-Rodríguez (Universidad de Granada), Juan Antonio López-Villanueva (Universidad de Granada), Juan Antonio Jiménez-Tejada (Universidad de Granada), Pablo Lara-Bullejos (Universidad de Granada), Juan Enrique Carceller (Universidad de Granada).
  • Linearity study of DG MOSFETs using the Integral Function Method
    • Antonio Lázaro (Universitat Rovira i Virgili), Antonio Cerdeira (CINVESTAV), Magali Estrada (CINVESTAV), Bogdan Nae (Universitat Rovira i Virgili), Benjamín Iñíguez (Universitat Rovira i Virgili).
  • A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator
    • María Balaguer (Universidad de Granada), Juan Bautista Roldán Aranda (Universidad de Granada), I.M. Tienda-Luna (Universidad de Granada), F. G. Ruíz (Universidad de Granada), A. Godoy (Universidad de Granada), F. Gámiz (Universidad de Granada).
  • Influence of the temperature and lamp position in the phosphorus profile diffusion in Czochralski monocristalline Silicon by print deposition and rapid thermal annealing
    • Candido Vazquez (Isofoton S.A.), Miguel A. Vazquez (Isofoton S.A.), Luis A. Caballero (Isofoton S.A.), Jesus Aloonso (Isofoton S.A.), Jose Ramos Barrado (Universidad de Malaga), Rocio Romero (Universidad de Málaga).
  • Study of surface roughness in extremely small Si nanowire MOSFETs using fully-3D NEGFs
    • Natalia Seoane (University of Santiago de Compostela), Antonio Martinez (University of Glasgow), Andrew Brown (University of Glasgow), Asen Asenov (University of Glasgow).
  • Efficient 3D Drift-Diffusion simulations of Implant Free Heterostructure Devices
    • Natalia Seoane (University of Santiago de Compostela), Antonio Garcia-Loureiro (University of Santiago de Compostela), Manuel Aldegunde (University of Santiago de Compostela), Karol Kalna (University of Glasgow), Asen Asenov (University of Glasgow).
  • Interfacial Properties of HfO2/SiN/Si Gate Structures
    • María Toledano-Luque (Universidad Complutense de Madrid), Álvaro del Prado (Universidad Complutense de Madrid), Enrique San Andrés (Universidad Complutense de Madrid), Pedro Carlos Feijoo (Universidad Complutense de Madrid), Aintzane Amezaga (Universidad Complutense de Madrid), María Luisa Lucía (Universidad Complutense de Madrid).
  • The role of Si surface on damage generation and recombination
    • Iván Santos (University of Valladolid), Luis A. Marqués (University of Valladolid), Lourdes Pelaz (University of Valladolid), Pedro López (University of Valladolid), María Aboy (University of Valladolid).
  • Monte Carlo Simulation of Sb-based heterostructures
    • Helena Rodilla (Universidad de Salamanca), Tomás González (Universidad de Salamanca), Daniel Pardo (Universidad de Salamanca), Javier Mateos (Universidad de Salamanca).
  • Study of the electroluminescence at 1.5 µm of different SiOx:Er layers made by reactive magnetron sputtering.
    • Olivier Jambois (University of Barcelona), Yonder Berencen (University of Barcelona), Blas Garrido (University of Barcelona), T. Kenyon, M. Wodjak, F. Gourbilleau, L. Khomenkova, R. Rizk.
  • Frequency response of T-shaped Three Branch Junctions as Mixers and Detectors
    • Ignacio Iñiguez-de-la-Torre (Universidad de Salamanca), Tomás González (Universidad de Salamanca), Daniel Pardo (Universidad de Salamanca), Javier Mateos (Universidad de Salamanca), Yannick Roelens (IEMN, Lille, France), Sylvain Bollaert (IEMN).
  • Using Grid Infrastructures for a Stationary DGSOI Monte Carlo Simulation
    • Raul Valin (University of Santiago de Compostela), Carlos Sampedro (University of Granada), Natalia Seoane (University of Santiago de Compostela), Andrés Godoy (University of Granada), Manuel Aldegunde (University of Santiago de Compostela), Antonio Garcia-Loureiro (Universidad de Santiago de Compostela), Francisco Gamiz (University of Granada).
  • Comparative study of Laterally Asymmetric Channel and conventional MOSFETs
    • Raul Rengel (Universidad de Salamanca), María J. Martín (Universidad de Salamanca), François Danneville (I.E.M.N.).
  • Pulsed Laser Melting of GaP
    • David Pastor (Universidad Complutense de Madrid (UCM)), Javier Olea (Universidad Complutense de Madrid (UCM)), Ignacio Mártil (Universidad Complutense de Madrid (UCM)), Marc Ollé (Instituto Jaume Almera (C.S.I.C.)), Ramón Cuscó (Instituto Jaume Almera (C.S.I.C.)), Luis Artus (CSIC), Germán González-Díaz (Universidad Complutense de Madrid).
  • Thin high-k dielectric layers deposited by ALD
    • Francesca Campabadal (IMB-CNM, CSIC), Miguel Zabala (IMB-CNM, CSIC), Joan Marc Rafí (IMB-CNM, CSIC), Maria Cruz Acero (IMB-CNM, CSIC), Ana Sánchez (IMB-CNM, CSIC), Javier Sánchez (IMB-CNM, CSIC), Robert Andreu (IMB-CNM, CSIC).
  • Monte Carlo Study of an InAlAs/InGaAs Velocity Modulation Transistor
    • Beatriz G. Vasallo (Universidad de Salamanca), Tomás González (Universidad de Salamanca), Daniel Pardo (Universidad de Salamanca), Javier Mateos (Universidad de Salamanca).
  • Simulated and experimental angular response of a commercial MOSFET used as dosimeter
    • Miguel Angel Carvajal Rodriguez (Universidad de Granada), Salvador García-Pareja (Hospital U. Carlos Haya), Manolo Vilches (Hospital U. Virgen de las Nieves), Damian Guirado (Hospital U. San Cecilio), Marta Anguiano (Universidad de Granada), Antonio Lallena (Universidad de Granada), Alberto J. Palma (Universidad de Granada).
  • New Non-Volatile Schottky Barrier Flash Memory
    • Chun-Hsing Shih (Yuan Ze University, Taiwan), San-Pin Yeh (National Tsing Hua University, Taiwan), Ji-Ting Liang (National Tsing Hua University, Taiwan).
  • Neutron Detection with Silicon Device
    • Consuelo Guardiola (Centro Nacional de Microelectrónica, CSIC), Manuel Lozano (Centro Nacional de Microelectrónica, Barcelona), Giulio Pellegrini (Centro Nacional de Microelectrónica, Barcelona).
  • AlAs-GaAs Prismatic Nanowires for Optoelectronic Applications
    • Josep M. Rebled (Universitat de Barcelona), Sònia Conesa-Boj (Universitat de Barcelona), Jordi Arbiol (Universitat de Barcelona), Francesca Peiró (Universitat de Barcelona), Joan R. Morante (Universitat de Barcelona), Anna Fontcuberta i Moral (École Polytechnique Fédérale de Lausanne).
  • Lateral Punch-Through TVS Devices: Design and Fabrication
    • Jesus Urresti (Instituto de Microelectronica de Barcelona (CSIC)), Salvador Hidalgo (Instituto de Microelectronica de Barcelona (CSIC)), David Flores (Instituto de Microelectronica de Barcelona (CSIC)), Jose Rebollo (Instituto de Microelectronica de Barcelona (CSIC)).
  • Engineered Porous Silicon Microparticles
    • Marta Duch (IMB-CNM (CSIC)), Núria Torres-Herrero (IMB-CNM (CSIC)), Rodrigo Gómez (IMB-CNM (CSIC)), Jose Antonio Plaza (IMB-CNM (CSIC)), Jaume Esteve (IMB-CNM (CSIC)).
  • Ion Hit Emulation by LASER Beam Model.
    • Isabel Lopez-Calle (Universidad Complutense de Madrid), Francisco J. Franco (Universidad Complutense de Madrid), Juan A. de Agapito (Universidad Complutense de Madrid).
  • Investigation of a New Partial Ground Plane Based MOSFET on Selective Buried oxide
    • Sajad Loan (IIT Kanpur).
  • Fabrication of Ohmic Contacts to Si+ implanted GaN
    • Marcel Placidi (CNM), Aurore Constant (IMB-CNM-CSIC Barcelona), Amador Pérez-Tomás (IMB-CNM-CSIC Barcelona), Gemma Rius (IMB-CNM-CSIC Barcelona), Philippe Godignon (IMB-CNM-CSIC Barcelona).
  • A complete model for electrical behaviour of single carrier organic diodes in the presence of a field-dependent mobility
    • Amgel Luis Alvarez (Universidad Rey Juan Carlos), Beatriz Romero (Universidad Rey Juan Carlos), Belen Arredondo (Universidad Rey Juan Carlos), Ricardo Mallavia (Universidad Miguel Hernández), Xabier Quintana (Universidad Polítécnica de Madrid), José Manuel Otón.
  • Current-voltage characteristics at the contacts of organic transistors
    • Pablo Lara Bullejos (Universidad de Granada), Juan Antonio Jimenez Tejada (Universidad de Granada), Jamal Deen (McMaster University), Ognian Marinov (McMaster University), Salvador Rodriguez Bolívar (Universidad de Granada).
  • Diseño Basado en Modelo de un Módulo de Transmisión Adaptativa para un Sistema OFDM Sin Línea de Vista (WiMAX)
    • Maria Isabel Mera (ESPOL), Rebeca Estrada (ESPOL).
  • Quantum Monte Carlo simulation of ultra-short DGSOI devices: A Multi-Subband approach
    • Carlos Sampedro (Universidad de Granada), Raul Valin (Universidad de Santiago), Francisco Gamiz (Universidad de Granada), Antonio Garcia-Loureiro (Universidad de Santiago), Andres Godoy (Universidad de Granada), Francisco G. Ruíz.
  • Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFET
    • Andrew Brown (University of Glasgow), Antonio Martinez (University of Glasgow), Natalia Seoane (University of Santiago de Compostela), Asen Asenov (University of Glasgow).
  • 3D Parallel Finite Element Monte Carlo Simulator With Quantum Corrections Using Density Gradient Approach
    • Manuel Aldegunde (Universidad de Santiago de Compostela), Antonio Garcia-Loureiro (Universidad de Santiago de Compostela), Natalia Seoane (Universidad de Santiago de Compostela), Karol Kalna (Universidad de Santiago de Compostela).
  • Accurate Simulation of the Electron Density of Surrounding Gate Transistors
    • Francisco Javier García Ruiz (Universidad de Granada), Isabel M. Tienda-Luna (Universidad de Granada), Andrés Godoy (Universidad de Granada), Carlos Sampedro (Universidad de Granada), Francisco Gámiz (Universidad de Granada).