Topic areas

The conference objective is to gather the most recent advances in the field of the electronic devices. In particular:


  1. Materials, technology and process simulation: Fabrication technologies of bulk materials (Czochralski, Bridgman, etc) and materials on surface (LPE, MBE, MOVPE... ). Semiconductor material development. Process technologies and simulation of semiconductors: bulk substrates treatment, photolitography, etching, diffusion, ion implantation, insulators, insulator and metal accumulation, ohmic contacts, etc.
  2. Device modelling and simulation: Statistical, analytical and numerical models of electronic, optical and physical properties of the devices: Including physical model and equivalent electrical circuit model of the devices and interconnections.
  3. Characterisation and reliability: Characterisation of useful materials for semiconductor devices (SIMS, XPS, photo-luminescence, Hall effect, X ray diffractometry, microscopy, Auger, RBS, etc.) and device characterisation (quantum efficiency, I-V and C-V plots, TLM, etc.). Device reliability, fault analysis, electro-migration, real time and fast degradation experiments, etc.


  1. Sensors, actuators and MEMS: Integration of devices and structures in sensor, actuator and MEMS development. Bio-detection, molecular, physical, chemical, integrated sensors, and micro-optical devices and micro-energetic generators.
  2. Photovoltaic and optoelectronic devices and displays: Silicon photocells, III-V, II-VI, organic and intermediate band semiconductors, and photovoltaic devices, thermo-photovoltaic devices, monochromatic light converters, etc. Optoelectronic devices: light emitting diodes (LEDs), LASER, modulators and photonic crystals. CCD, TFT, LCD, amorphous, polycrystalline and organic displays.
  3. Micro and nano-devices: Nanoelectronic devices and structures: nanotubes, nanowires and quantum dots. Bio-electronic, spintronic and molecular devices.
  4. RF, microwave and power devices: Discrete and integrated high power/voltage/current devices and RF devices: FETs, HBTs, microwave devices, commutators, capacitors and inductances.