Programa final
We would like to thank all the supports received from the following organizations and companies: University Rey Juan Carlos, Ayuntamiento de Aranjuez, IEEE Spain Chapter of the Electron Device Society, Instrumentos de Medida S.L., Antares Instrumentación, Madri+D Portal de Ciencia y Tecnología, and PHAMA Consortium.
We extend our thanks to the CDE Advisory and Technical Committees.. Our very special thanks to the organizers of the CDE from previous meetings in Palma and Valladolid and also to the CDE President, Prof. Ramón Alcubilla.
CDE 2015 HAND PROGRAM
Wednesday, Feb. 11th, 2015
10:00 h – 11:30 h REGISTRATION
12:30 h – 15:00 h PRELIMINARY WELCOME TO THE STUDENTS ELEVATOR-PITCH SESSION (not definitive).
15:00 h – 16:30 h SOCIAL EVENT
16:30 h – 20:00 h SATELLITE EVENT: IEEE Electron Device Society Mini COLLOQUIUM ON ADVANCES IN NANO- AND LARGE AREA ELECTRONICS (free attendance).
Welcome by the EDS Spain Chapter President, Prof. Lluis Marsal.
Distinguished lecturers: Tibor Grasser (Technische Universität Wien, Au), Jamal Deen (McMaster University, CA), Lluis Marsal (U. Rovira I Virgili, SP), Nathan Arokia (Cambridge University Centre for Advanced Photonics and Electronics, UK), Benjamin Iñiguez (U. Rovira I Virgili, SP)
18:00 h – 19:30 h REGISTRATION.
20:15 h – 20:30 h WELCOME RECEPTION ON BEHALF OF MUNICIPAL, AND ACADEMIC AUTHORITIES FROM UNIVERSIDAD REY JUAN CARLOS
20:30 h – 21:00 h Universidad Rey Juan Carlos CHAMBER CHOIR PERFORMANCE.
21:00 h RECEPTION COCKTAIL (Courtyard, Palacio del Nuncio)
Thursday, Feb. 12th, 2015
8:00 h – 8:30 h REGISTRATION
8:30 h – 8:45 h OPENING: Prof. Ramón Alcubilla, President of the Spanish CDE.
8:45 h – 9:30 h PLENARY TALK: Fernando Martín Galende, EU Programmes Division - Spanish ICT National Contact Point – Horizon 2020
9:30 h – 11:35 h SESSIONS 1 and 3: Graphene, new materials, and device processing technology.
11:35 h – 12:00 h COFFEE BREAK
12:00 h – 13:45 h SESSION 4a: Sensors, actuators and micro/nano systems
13:45 h – 15:00 h LUNCH
15:00 h – 16:45 h SOCIAL EVENT: VISIT TO THE GARDENS OF THE ROYAL PALACE.
16:45 h – 17:25 h IEEE EDS Mini-COLLOQIUM, FINAL SESSION. Distinguished Lecturer: Enrico Sangiorgi (Universita degli Studi di Bologna, IT). (Free entrance).
17:30 h – 18:30 h SESSION 4b: Sensors, actuators and micro/nano systems
18:30 h – 18:45 h COFFEE BREAK
18:45 h – 19:25 h SESSION 2a: Device modeling and simulation.
19:25 h – 20:45 h MAIN POSTER: SESSION (all posters are exhibited)
CDE Committee Meeting
21.00 h - GALA DINNER
Friday, Feb. 13th, 2015
8:45 h – 9:30 h PLENARY TALK (Prof. George Malliaras, Head Department of Bioelectronics, ENSM- Centre Microélectronique de Provence -EMSE, MOC)
9:30 h – 10:55 h SESSION 2b. Device modeling and simulation.
10:55 h – 11:20 h COFFEE BREAK AND CONTINUATION OF POSTER SESSION
11:20 h – 13:20 h SESSION 5a. Characterization and reliability.
13:30 h – 15:00 h LUNCH
15:00 h – 15:40 h SESSION 5b. Characterization and reliability
15:45 h – 16:30 h PLENARY TALK (Prof. J. Bisquert, Departamento de Física. Universitat Jaume I de Castelló)
16:30 h – 19:00 h SESSION 6. Optoelectronic, photovoltaic devices and displays. Hybrid and organic electronics.
17:30 h – 17:50 COFFEE BREAK.
18:50 h – 19:15 h POSTER SESSION FINAL DISCUSSIONS 2
19.15 h - 20.00 h. AWARDS CEREMONY.CLOSING REMARKS
EDS: Best Student Award
CDE 2015 EXTENDED PROGRAM
Wednesday, Feb. 11th, 2015
10:00 h - Palacio del Nuncio, entrance hall
REGISTRATION
12:30 h – 15:30 h Auditorium, Palacio del Nuncio
PRELIMINARY WELCOME TO THE STUDENTS ELEVATOR-PITCH SESSION (not definitive).
16:30 h – 18:15 h Auditorium, Palacio del Nuncio.
IEEE Electron Device Society MINICOLLOQUIUM ON ADVANCES IN NANO- AND LARGE AREA ELECTRONICS (free attendance). Welcome by the EDS Spain Chapter President, Prof. Benjamin Iñiguez. Chair
SESSION A. Distinguished lecturers:
- Prof. Nathan Arokia (Cambridge University Centre for Advanced Photonics and Electronics, UK)
-- Amorphous Oxide Technology for Large Area Electronics: From Devices to Circuits and Systems, Facilitated by CAD –
- Prof. Benjamín Íñiguez (U. Rovira I Virgili, SP)
-- Compact modeling of junctionless transistors --
- Prof. Jamal Deen (McMaster University, CA)
-- Flexible Electronics – Opportunities and Challenges --
18:15 h – 18:30 h Courtyard, Palacio del Nuncio
EDS Mini-Colloquium COFFEE BREAK
18.30 h - 19.45 h SESSION B. Prof. Prof. Benjamín Íñiguez, Chair.
Distinguished lecturers:
- Prof. Tibor Grasser (Technische Universität Wien, Au)
- Prof. Lluis Marsal (U. Rovira I Virgili, SP)
-- Nanostructured polymer solar cells: fabrication, characterization and modeling --
20:00 h – 20:15 h Auditorium, Palacio del Nuncio
WELCOME RECEPTION ON BEHALF OF MUNICIPAL, AND ACADEMIC AUTHORITIES FROM UNIVERSIDAD REY JUAN CARLOS.
Universidad Rey Juan Carlos CHAMBER CHOIR performance (program at the main web site)
21:00 h – Courtyard, Palacio del Nuncio
RECEPTION COCKTAIL
Thursday, Feb. 12th, 2015
8:00 h - Palacio del Nuncio, entrance hall
REGISTRATION
8:30 h – 8:45 h Auditorium, Palacio del Nuncio
OPENING: Prof. Ramón Alcubilla, President of the Spanish CDE
8.45 h - 9.30 h PLENARY TALK: Fernando Martín Galende, EU Programmes
Division - Spanish ICT National Contact Point – Horizon 2020
9.30 h - 11.35 h Auditorium, Palacio del Nuncio
SESSI0NS 1 and 3: Graphene, new materials, and device processing technology
Chairperson:
9.30 h - 9.50 h
0.1.1. In situ TEM study of reduction of graphene oxide by Joule heating
Gemma Martína,*, Aïda Vareaa, J.M. Rebleda,b Ruben Sánchez-Hidalgoc, David López-Díazc, M. Mercedes Velázquezc, Albert Cireraa, Francesca Peiróa, Sònia Estradéa and Albert Corneta
aMIND/IN2UB, Departament d’Electrònica, Universitat de Barcelona, Marti i Franqués 1, 08028 Barcelona, Spain
bCCiT, Universitat de Barcelona, C/Lluís Solé i Sabaris 1, 08028 Barcelona, Spain
cDto de Química Física, Facultad de Ciencias Químicas. Universidad de Salamanca, E37008 Salamanca, Spain
9.50 h - 10.10 h
0.1.2. Dry etching of graphene: from nanodots to microwires
Carmen Coya1, Miguel García-Vélez1, Angel Luis Álvarez1, Esteban Climent-Pascual2, Carmen Munuera2 and Alicia de Andrés2
1 Escuela Técnica Superior de Ingeniería de Telecomunicación (ETSIT), Universidad Rey Juan Carlos, 28933 Madrid, Spain
2 Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco, Madrid, 28049, Spain
10.10 h - 10.30 h
0.1.3. Influence of Doping on the Optical Response of GaInP
E. Ochoa-Martíneza,*, M. Gabása, L. Barrutiab, M. Ochoab, I. Rey-Stolleb, E. Barrigónb, Carlos Algorab
aUniversidad de Málaga, The Nanotech Unit, Departamento de Física Aplicada I, 29071 Málaga, Spain
bInstituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid, Spain.
10.30 h - 10.50 h
0.1.4. On the growth mechanisms of GaAs nanowires by Ga-assisted chemical beam epitaxy
C. García Núñez, A.F. Braña, N. López and B.J. García
Grupo de Electrónica y Semiconductores. Dpto. Física Aplicada. Universidad Autónoma de Madrid..
10.50 h - 11.10 h
0.1.5. Automatic transfer of graphene and its electrical characterization
Alberto Boscá1, 2*, J. Pedrós1, 3, A. Ladrón de Guevara1, J. Martínez1, 4, F. Calle1, 2, 3
1Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Madrid, 28040, Spain
2Dpto. Ingeniería Electrónica, E.T.S.I de Telecomunicación, Universidad Politécnica de Madrid, Madrid, 28040, Spain
3Campus de Excelencia Internacional, Campus UCM-UPM, Madrid, 28040, Spain
4Dpto. de Ciencia de Materiales, E.T.S.I de Caminos, Canales y Puertos, Universidad Politécnica de Madrid, Madrid, 28040, Spain.
11.10 h - 11.30 h
0.1.6. Chemical vapour deposition of 3D graphene foams: synthesis, properties, and applications
J. Pedrós1,2 *, A. Boscá1,3, P. Bonato1, J. Martínez1,4, E. Climent5, A. de Andrés5, and F. Calle1,2,3
1Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Madrid, 28040, Spain
3Dpto. Ingeniería Electrónica, E.T.S.I de Telecomunicación, Universidad Politécnica de Madrid, Madrid, 28040, Spain
2Campus de Excelencia Internacional, Campus Moncloa UCM-UPM, Madrid, 28040, Spain
4Dpto. de Ciencia de Materiales, E.T.S.I de Caminos, Canales y Puertos, Universidad Politécnica de Madrid, Madrid, 28040, Spain.
11:30 h – 11:55 h Courtyard, Palacio del Nuncio
COFFEE BREAK
12.00 h - 13.45 h Auditorium, Palacio del Nuncio
SESSI0N 4a: Sensors, actuators and micro/nano systems
Chairperson:
12.00 h - 12.20 h
0.4.1. Microsensors for the multiparametric analysis of natural gas quality
Irene Castro-Hurtado1, Isabel Ayerdi1, Enrique Castaño1, Angel Mª Gutierrez2,
Juan Ramón Arraibi2
1Microelectronics and Microsystems Unit, CEIT and Tecnun (University of Navarra), Paseo Manuel de Lardizabal 15, 20018-San Sebastián, Spain
2EDP NATURGAS ENERGIA, General Concha 20, 48010-Bilbao, Spain
12.20 h - 12.40 h
0.4.2. SiNERGY, a project on energy harvesting and microstorage empowered by Silicon technologies
Luis Fonseca, Carlos Calaza, Marc Salleras, Gonzalo Murillo, Jaume Esteve Albert Tarancón1, Alex Morata1, Jose D. Santos1, Gerard Gadea1
IMB-CNM (CSIC) Carrer dels Til•lers, Campus UAB Bellaterra 08193
1Institut de Recerca en Energia de Catalunya (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià de Besòs, Barcelona, Spain
12.40 h - 13.00 h
0.4.3. ZnO conductometric sensor for indoor air quality measurement inside buildings
J. González-Chávarri1,2, I. Castro-Hurtado1,2, I. Ayerdi1,2, E.Castaño1,2, G.G. Mandayo1,2
1CEIT and Tecnun (Universidad de Navarra),P.Mikeletegi 48, 20009 San Sebastián, Spain
2CIC microGUNE, Goiru Kalea 9 Polo Innovación Garaia, 20500 Arrasate-Mondragón, Spain.
13.00 h - 13.20 h
0.4.4. Piezoresistive cantilever force sensors based on polycrystalline silicon
L.G. Villanueva1, G. Rius2, F Pérez-Murano, J Bausells
Barcelona Microelectronics Institute, IMB-CNM (CSIC), Campus UAB, E-08193 Bellaterra, Spain.
1 EPFL, BM 5134 - Station 17, CH-1015 Lausanne, Switzerland.
2 Nagoya Institute of Technology, NITech, Gokiso, Showa, 466-8555 Nagoya, Japan.
13.20 h - 13.40 h
0.4.5. Liquid-crystalline pushing micropillars as actuators for haptic devices
N. Torrasa, A. Sánchez-Ferrerb, K.E. Zinovieva, J. Estevea
a Instituto de Microelectrónica, IMB-CNM (CSIC), Campus UAB, Bellaterra, E-08193 Barcelona, Spain.
b ETH Zurich, Department of Health Sciences & Technology, Institute of Food, Nutrition & Health, Food & Soft Materials Science Group, Schmelzbergstrasse 9, CH-8092 Zurich, Switzerland.
13:45 h – 15:00 h Dining room, basement, Palacio del Nuncio
LUNCH
15:00 h – 16:30 h Aranjuez village
VISIT TO THE GARDENS OF THE ROYAL PALACE
16:45 h – 17:25 h Auditorium, Palacio del Nuncio.
IEEE Electron Device Society MINICOLLOQUIUM ON ADVANCES IN NANOTECHNOLOGY (free attendance). Prof. Lluis Marsal. Chair
FINAL SESSION. Distinguished lecturer:
- Prof. Enrico Sangiorgi (Universita degli Studi di Bologna, IT)
-- Micro-nanopower systems for energy harvesting --
17.30 h - 13.30 h Auditorium, Palacio del Nuncio
SESSI0N 4b: Sensors, actuators and micro/nano systems
Chairperson:
17.30 h - 17.50 h
0.4.6. Ge nanowire-based gas sensor fabricated by localized growth on microhotplates
J. Samà1, S. Barth2, J.D. Prades1, M. Seifner2, O. Casals1, I. Gracia3, J. Santander3, C. Calaza3, L. Fonseca3, C. Cané3, A. Romano-Rodríguez1
1 Universitat de Barcelona (UB), MIND-IN2UB-Departament d’Electrònica, c/Martí i Franquès, 1, 08028 Barcelona,
Spain; tel: 93 403 91 56, FAX: 93 402 11 48, e-mail: albert.romano@ub.edu
2 Technical University Vienna, Institute of Materials Chemistry, Getreidemarkt 9/BC/02, 1060 Vienna, Austria
3 Consejo Superior de Investigaciones Científicas (CSIC), Institut de Microelectrònica de Barcelona-Centro Nacional de Microelectrónica, Campus UAB, 08193 Bellaterra, Spain
17.50 h - 18.10 h
0.4.7. Hybrid Integration of VCSEL and Microlens for a Particle Detection Microoptical System
I. Bernat1, L. Fonseca2, M. Moreno1,A. Romano-Rodriguez1
1 Departament de Electrònica, Facultat de Física, Universitat de Barcelona. Martí i Franquès 1, 08028 Barcelona
2 Instituto de Microelectrónica de Barcelona, CNM (CSIC), Campus UAB, 08193 Bellaterra, Spain.
18.10 h - 18.30 h
0.4.8. Intracellular silicon chips: A new research line at the IMB-CNM (CSIC)
M. Duch, R. Gómez-Martínez, S. Duran, J. Esteve, J. A. Plaza
Instituto de Microelectrónica de Barcelona, CNM (CSIC), Campus UAB, 08193 Bellaterra, Spain.
18:30 h – 18:45 h Courtyard, Palacio del Nuncio
COFFEE BREAK
18:45 h – 19:25 h Auditorium, Palacio del Nuncio
SESSI0N 2a: Sensors, Device modeling and simulation
Chairperson:
18:45 h - 19.05 h
0.2.1. DC SHEs on GaN HEMTs varying substrate material
Raúl Rodríguez1, Benito González1, Javier García1, Fetene Mulugeta2, José María Tirado3, Benjamín Iñiguez2, and Antonio Núñez1
1 Institute for Applied Microelectronics (IUMA), ULPGC, Las Palmas de G.C., Spain; email: rrodriguez@iuma.ulpgc.es
2 Department of Electric, Electronic and Automation Engineering, URV, Tarragona, Spain
3 Department of Electric, Electronic, Automation and Communications Engineering, UCLM, Toledo, Spain.
19:05 h – 19:25 h
0.2.2. Low Gain Avalanche Detectors for High Energy Physics Experiments
P. Fernández-Martínez1*, M. Baselga1, M. Fernández García2, D. Flores1, V. Greco1, S. Hidalgo1, G. Kramberger3, G. Pellegrini1, D. Quirion1, and I. Vila2
1 IMB-CNM (CSIC), Campus UAB, 08193 – Bellaterra, Barcelona (Spain)
2 IFCA (CSIC), Av. de los Castros s/n, 39005 – Santander (Spain).
3 Institut Jožef Stefan, Jamova 39, 1000 – Ljubljana (Slovenia)
19:25 h Board Room Palacio del Nuncio
CDE Committee meeting
19.25 h – 20:40 h Courtyard, Palacio del Nuncio
MAIN POSTER SESSION (all posters are exhibited)
21:00 h Aranjuez Village
GALA DINNER
Friday, Feb. 13th, 2015
8:00 h - Palacio del Nuncio, entrance hall
REGISTRATION
8.45 h - 9.30 h PLENARY TALK: Prof. George G. Malliaras,
Head Department of Bioelectronics, ENSM- Centre Microélectronique de Provence -EMSE, MOC
-- Interfacing with the Brain using Organic Electronics --
9:30 h – 10:50 h Auditorium, Palacio del Nuncio
SESSI0N 2b: Sensors, Device modeling and simulation
Chairperson:
9:30 h – 9:50 h
0.2.3. Implementation of numerical methods for nanoscaled semiconductor device simulation using OpenCL.
E. Coronado-Barrientos, A. Garcia-Loureiro, G. Indalecio, N. Seoane1
Centro de Investigacion en Tecnoloxias da Informacion (CiTIUS), Universidad de Santiago de Compostela, Santiago de Compostela, Spain.
1 Electronic Systems Design Centre, College of Engineering, Swansea University, Wales, United Kingdom
9:50 h – 10:10 h
0.2.4. Time-dependent physics of double-tunnel junctions
Vincent Talbo1, Javier Mateos1, Sylvie Retailleau2, Philippe Dollfus2, Tomás González1
1 Departamento de Física Aplicada, Universidad de Salamanca, Plaza de la Merced S/N, E-37008 Salamanca, Spain
2 Institut d’Electronique Fondamentale, Université Paris-Sud, CNRS UMR 8622, F-91405 Orsay, France.
10:10 h – 10:30 h
0.2.5. Calculation of self-heating in cryogenic InP HEMTs by Monte Carlo simulations of phonon and electron transport
J. Mateos1, I. Iniguez-de-la-Torre1, H. Rodilla2, J. Schleeh2, J. Grahn2, T. González1 and A. J. Minnich3
1 Dpto. Física Aplicada, Universidad de Salamanca, 37008 Salamanca, Spain
2 Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden
3 Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA 91125
10:30 h – 10:50 h
0.2.6. New result for Optical OFDM in Code Division Multiple Access systems using direct detection
A. Cherifi1, B. Bouazza1, A. O. Dahmane2, B. Yagoubi 3
1 Laboratory Technology of Communication, University Of Tahar Moulay Saida, 138 nasr, Algeria.
2 University of Québec à Trois-Rivières C .P. 500, Trois-Rivières, Québec, Canada / G9A 5H7
3 University of Abdelhamid Ibn Bdis Mostaganem, Algeria.
10.55 h - 11.20 h Courtyard, Palacio del Nuncio
COFFEE BREAK and POSTER SESSION CONTINUATION
11.20 h - 13.20 h Auditorium, Palacio del Nuncio
SESSI0NS 5a: Characterization and reliability
11.20 h - 11.40 h
0.5.1. Investigation of the Resistive Switching Behavior in Ni/HfO2-based RRAM Devices
M.B. Gonzalez, M.C. Acero, O. Beldarrain, M. Zabala, and F. Campabadal
Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Spain
11:40 h – 12:00 h
0.5.2. Electrical characterization of MIS capacitors based on Dy2O3-doped ZrO2 dielectrics
H. García1, H. Castán1, S. Dueñas1, E. Pérez1, L. Bailón1, A. Tamm2, K. Mizohata3,
K. Kukli2, J.Aarik2
1 Dept. de Electricidad y Electrónica, Universidad de Valladolid, ETSI Telecomunicación, Paseo de Belén 15, 47011 Valladolid, Spain
2 University of Tartu, Institute of Physics, Department of Materials Science, EE-50411 Tartu, Estonia
3 Department of Physics, University of Helsinki, P.O. Box 43, FI-00014, University of Helsinki, Finland
12.00 h - 12.20 h
0.5.3. Amorphous/crystalline silicon interface characterization by capacitance and conductance measurements
R. García-Hernansanz *1,2, E. García-Hemme 1,2, D. Montero-Alvarez 1,2, J. Olea 3,2, D. Pastor 1,2, A. del Prado1, I.Mártil1 and G. González-Díaz1
1 Dpto. Física Aplicada III,Univ. Complutense de Madrid
2 CEI Campus Moncloa, UCM-UPM, Madrid, Spain
3 Instituto de Energía Solar, E.T.S.I. Telecomunicación, Univ. Politécnica de Madrid.
12.20 h - 12.40 h
0.5.4. Valence EELS analysis of multiple InGaN-QW structure for electronic properties
A. Eljarrat1,*, L. López-Conesa1, C. Magén2,3 , N. García-Lepetit4, Ž. Gačević4, E. Calleja4, S. Estradé1,5 and Francesca Peiró1
1 LENS-MIND-IN2UB, Departament d'Electrònica, Universitat de Barcelona, c/ Martí i Franqués 1, 08028 Barcelona, Spain.
2 LMA-INA, Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza, Spain
3 Fundación ARAID, 50018 Zaragoza, Spain.
4 TEM-MAT, Centres Científics i Tecnològics (CciT), Universitat de Barcelona, Solís Sabarís 1, Barcelona, Spain.
5 ISOM, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain.
12.40 h - 13.00 h
0.5.5. Anomalous Low-Frequency Noise Increase at the Onset of Oscillations in Gunn Diodes
Ó. García-Pérez1, Y. Alimi2, A. Song2, I. Íñiguez-de-la-Torre1, S. Pérez1, J. Mateos1, T. González1
1 Dpto. Física Aplicada, Universidad de Salamanca, 37008 Salamanca, Spain
2 School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom.
13.00 h - 13.20 h
0.5.6. Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs
Q.Wu, M. Porti, A. Bayerl, J. Martin-Martínez, R. Rodriguez, M. Nafria, X. Aymerich, E. Simoen1
Dept. Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), Barcelona, Spain
1 IMEC, Leuven, Belgium
13:30 h – 15:00 h Dining room, basement, Palacio del Nuncio
LUNCH
15:00 h – 15:40 h Auditorium, Palacio del Nuncio
SESSI0N 5b: Characterization and reliability
Chairperson:
15.00 h - 15.20 h
0.5.7. Impact of millisecond anneal induced for ultra-shallow junctions on Negative Bias Temperature Instability
M. Morasa, J. Martin-Martineza, V. Velayudhana, R. Rodrigueza, M. Nafriaa, X. Aymericha and E. Simoenb
a Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), Bellaterra, Barcelona, Spain
b IMEC, Leuven, Belgium
15.20 h - 15.40 h
0.5.8. Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric fabricated on Si
Z. Gao1*, M. F. Romero1, M. A. Pampillon2, E. San Andres2, F. Calle1
1 Dep. Ingeniería Electrónica and Instituto de Sistemas Optoelectrónicos y Microtecnología, ETSI Telecomunicación, Universidad Politécnica de Madrid, Av. Complutense 30, 28040 Madrid, Spain
2 Dep. Física Aplicada III (Electr. y Electron.), Univ. Complutense de Madrid, Madrid, Spain.
15.45 h - 16.25 h PLENARY TALK: Prof. Joan Bisquert,
Departamento de Física. Universitat Jaume I de Castelló
-- Dynamic processes in perovskite solar cells --
16:30 h – 19:00 h Auditorium, Palacio del Nuncio
SESSI0N 6 Optoelectronic, photovoltaic devices and displays. Hybrid and organic electronics.
Chairperson:
16.30 h - 16.50 h
0.6.1. New Generation Architectures in III-V Multijunction Solar Cells for Efficiencies of 50%
C. Algora, I. Rey-Stolle, E. Barrigón, I. García, M. Vázquez, N. Núñez, R. Peña. P. Espinet, M. Ochoa, L. Ayllón, L. Barrutia, V. Orlando, H. Pengyun, M. Gabás1 and S. Palanco1, C. Ballesteros2 and B. Galiana2
Instituto de Energía Solar, Universidad Politécnica de Madrid
1 Dpto. Física Aplica I, The Nanotech Unit, Universidad de Málaga
2 Universidad Carlos III de Madrid
16.50 h - 17.10 h
0.6.2. Spectral Coupling of Atmosphere and the Performance of Perovskite Solar Cells
Eduardo F. Fernandez1,2,3*, S. Senthilarasu1, F. Almonacid3, A. J. Garcia-Loureiro2, T. K. Mallick1
1 Environment and Sustainability Institute (ESI), University of Exeter, Penryn, Cornwall TR10 9FE, United Kingdom
2 Centro de Investigación en Tecnoloxías da Información (CITIUS), University of Santiago de Compostela, Santiago de Compostela E15782, Spain
3 Centro de Estudios Avanzados en Energía y Medio Ambiente (CEAEMA), University of Jaen, Jaen 23071, Spain
17.10 h - 17.30 h
0.6.3. Deep level defects in mono-like, quasi-mono and multicrystalline silicon solar wafers
E. Pérez, H. García, H. Castán, S. Dueñas, and L. Bailón
Dept. de Electricidad y Electrónica, Universidad de Valladolid, E.T.S.I. de Telecomunicación, Paseo de Belén 15, 47011 Valladolid, Spain.
17.30 h - 17.50 h Courtyard, Palacio del Nuncio
COFFEE BREAK and POSTER SESSION CONTINUATION
17.50 h - 18.10 h
0.6.4. Optimizing diffusion, morphology and minority carrier lifetime in Silicon for GaAsP/Si dual-junction solar cells
Elisa García-Tabarés1, Diego Martín2, Ignacio Rey-Stolle1
1 Instituto de Energía Solar – Universidad Politécnica de Madrid. Avda. Complutense 30 – 28040 Madrid (Spain)
2 Departamento de Matemática Aplicada, Ciencia e Ingeniería de los Materiales y Tecnología Electrónica. Universidad Rey Juan Carlos. CL Tulipán s/n, 28933 Móstoles, Madrid (Spain)
18.10 h - 18.30 h
0.6.5. Degree of ordering as a function of Sb content in In0.5Ga0.5P layers for tandem solar cells
Ll. López1, C. Coll1, E. Barrigón2, L. Barrutia2, I. Rey-Stolle2, S. Estradé1, F. Peiró1
1 Laboratory of Electron Nanoscopies (LENS)-MIND/IN2UB, Dept. d’Electrònica, Universitat de Barcelona, c/ Martí Franqués 1, E-08028 Barcelona
2 Instituto de Energía Solar (IES), Universidad Politécnica de Madrid.
18.30 h - 18.50 h
0.6.6. All-inkjet printed organic transistors: Strategies to minimize variability
M.C. R. Medeiros 1, V. Parkula 2, C. Martinez-Domingo 3,4, E. Ramon4, F. Villani 5, F. Loffredo5, R. Miscioscia5, E. Sowade6, K. Y. Mitra6, R. R. Baumann6,7, I. McCulloch8, J. Carrabina9 and Henrique L. Gomes 2
1 Instituto de Telecommunicações, DEEC, FCTUC, University of Coimbra, Pinhal de Marrocos, Coimbra, Portugal.
2 Universidade do Algarve, Instituto de Telecomunicações, Av. Rovisco, Pais, 1, Lisboa, Portugal
3 Catalan Institute of Nanoscience and Nanotechnology (ICN2),Campus UAB Bellaterra, Barcelona, 08193 Spain.
4 Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Campus UAB Bellaterra, Barcelona, Catalonia, Spain.
5 Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici
Research Center, 80055 Portici,Naples, Italy
6 Chemnitz University of Technology, Digital Printing and Imaging Technology, Chemnitz, Germany.
7 Fraunhofer Institute for Electronic Nano Systems (ENAS), Printed Functionalities, Chemnitz, Germany
8 Department of Chemistry Imperial College London London SW7 2AZ, UK
9 CAIAC, Universitat Autònoma de Barcelona, Bellaterra, Catalonia, Spain
18.50 h - 19.15 h Courtyard, Palacio del Nuncio
POSTER SESSION FINAL DISCUSSIONS
19.15 h - Auditorium, Palacio del Nuncio
CONCLUDING REMARKS
AND BEST STUDENT CONTRIBUTION AWARD
Contributions for POSTER SESSIONS
P1.1- Effect of the blistering of ALD Al2O3 films on the silicon surface in Al-Al2O3-Si structures
M.C. Acero, O. Beldarrain, M. Duch, M. Zabala, M. B. González, and F. Campabadal. .#0016
P1.2- Monte Carlo Modeling of Mobility and Microscopic Charge Transport in Supported Graphene.
Raúl Rengel, José M. Iglesias, Elena Pascual and María J. Martín. #0020
P1.3- On the ageing mechanisms of graphene electrodes. #0030
Yuanyuan Shi, Yanfeng Ji, Fei Hui, Mario Lanza.
P1.4- Graphene devices fabricated by laser. #0040
A. Ladrón de Guevara, A. Bosca, J. Pedros, F. Calle, J. Martinez
P1.5- Electrostatics and drift-diffusion current model of bilayer graphene field-effect transistors.
Pasadas Cantos, Francisco; Jiménez Jiménez, David. #0061
P1.6- Simulation of the phonon-limited electron mobility in multi-layer MoS2 field-effect transistors.
J.M. González-Medina, F. G. Ruiz, A. Godoy, E. G. Marin, F. Gámiz. #0070
P1.7- Graphene transferred on atomic force microscope tips provides superior performance.
Fei Hui; Marc Porti; Montserrat Nafria; Mario Lanza. #0017
P2.1- 3D TCAD Modeling of Laser Processed c-Si Solar Cells. #0002
Juan M. López-González, Isidro Martín, Pablo Ortega, Albert Orpella and Ramón Alcubilla.
P2.2- Intrinsic factors determining the metal-graphene contact resistance. #0009
Chaves Romero, Ferney Alveiro; Jimenez Jimenez, David.
P2.4- Modeling of the I-V and I-t Characteristics of Multiferroic BiFeO3 Layers. #0010
E. Miranda, D. Jiménez, A. Tsurumaki-Fukuchi, J. Blasco, H. Yamada, J. Suñé, and A. Sawa.
P2.5- Floating-Body-Correlated Subthreshold Behavior of SOI NMOS Device Considering Back-Gate-Bias Effect. #0019
S. K. Hu and J. B. Kuo.
P2.6- Optoelectronic properties of small defect clusters in Si from multiscale simulations.
I. Santos, M. Aboy, P. López, L. A. Marqués, M. Ruiz, L. Pelaz #0042
P2.7- Modeling of nanocalorimetry experiments to investigate the kinetics of damage annealing in self-implanted Si. #0044
Ruiz Prieto, Manuel; Pelaz Montes, Lourdes; Marqués Cuesta, Luis Alberto; López Martín, Pedro; Santos Tejido, Iván; Aboy Cebrián, María.
P2.8- MD simulations of vacancy-like defects in amorphous Ge. #0045
Lopez Martin, Pedro; Sanchez Hurtado, Jose Miguel; Pelaz Montes, Maria Lourdes; Marques Cuesta, Luis Alberto; Santos Tejido, Ivan; Aboy Cebrian, Maria; Ruiz Prieto, Manuel.
P2.9- A charge-dependent mobility memristor model . #0049
Picos , Rodrigo; Al-Chawa , M. Moner; Garcia-Moreno , Eugeni
P2.10- Geometrical effects on the quality factor of extensional microplate resonators in liquid .
Ruiz-Díez , Víctor; Manzaneque , Tomás; Hernando-García , Jorge; Abdallah , Ababneh; Seidel, Helmut; Sánchez-Rojas , José Luis. #0064
P2.11- Short Channel Effects in Graphene Field-Effect Transistors. #0066
Feijoo Guerro, Pedro Carlos; Jiménez Jiménez, David
P2.12- Impact of the Absorption in Transmittance and Reflectance on Macroporous Silicon Photonic Crystals. #0072
Cardador Maza, David; Vega Bru, Didac; Rodriguez Martinez, Angel .
P2.13- Raytracing and electromagnetic 2-D simulations of the EQE of a-Si:H thin-film solar cells.
M. Fortes, E. Comesaña, J.A. Rodriguez, P. Otero, A. J. Garcia-Loureiro #0021
P2.14- A tool to deploy nanodevide simulations on Cloud. #0038
F. Gomez-Folgar, G. Indalecio. E. Comesaña, A. J. Garcia-Loureiro, T. F. Pena
P2.15- Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations. #0043
S. García, I. Íñiguez-de-la-Torre, Ó. García-Pérez, J. Mateos, T. González and S. Pérez
P2.16- Comparison of state-of-the-art distributed computing frameworks with the GWM. #0074
G. Indalecio, F. Gómez-Folgar, A. J. Garcia-Loureiro, Natalia Seoane
P2.17- Influence of systematic gate alignment variations on static characteristics in DG-SB-MOSFETs.
José M. Iglesias*, María J. Martín, Elena Pascual, Raúl Rengel #0092
P4.1- Flexible gas sensing devices with directly grown tungsten oxide nanoneedles via AACVD.
Vallejos Vargas, Stella; Gràcia Tortadés, Isabel; Figueras Costa, Eduardo; Sánchez López, Javier; Mas Colomina, Roser; Beldarrain Fernández, Oihane; Cané Ballart, Carles #0005
P4.2- RADFET response to photon and electron beams. #0011
Martínez Garcia, María Sofía; Torres del Rio, Julia; Banqueri Ozáez, Jesús; Carvajal Rodríguez, Miguel Angel; Palma López, Alberto José.
P4.3- Comparative study of printed capacitive sensors. #0013
Rivadeneyra Torres, Almudena; Fernández Salmerón, José; Agudo Acemel, Manuel; Capitán Vallvey, Luis Fermín; Palma López, Alberto; López Villanueva, Juan Antonio.
P4.4- Synthesis and characterization of SnO2 nanowires grown by CVD for application as gas sensors .
Sayago , Isabel ; Fernández , María Jesús; Fontecha , José Luis; Horrillo, Mari Carmen; Santos , José Pedro. #0018
P4.5- Liquid characterization by means of Love-wave device combined with microfluidic platform. #0027
D. Matatagui, M.J. Fernandez, J. Fontecha, J.P. Santos, I. Sayago, I. Gràcia, C. Cané, M.C. Horrillo.
P4.6- Use of an electronic nose as a tool to differentiate winemaking techniques. #0041
M. Aleixandre, J.P. Santos, I. Sayago, J.M. Cabellos, T. Arroyo, M.C. Horrillo.
P4.7- Real time detection of beer defects with a hand held electronic nose. #0053
Santos Blanco, José Pedro; Lozano Rogado, Jesús.
P4.8- Compact Device for CO2 Optical Sensing using Macroporous Silicon Photonic Crystals.
Vega Bru, Didac ; Trifonov , Trifon; Calavia Boldu, Raül; Vilanova Salas, Xavier; Rodríguez Martínez, Ángel. #0069
P4.9- Microfluidic platform with absorbance sensor for glucose detection. #0055
G. Flores, F. Perdigones, C. Aracil, M. Cabello and J.M. Quero.
P4.10- A New Kind of Miniature Sun Sensors Design. #0091
Wang Sui’an, Li Peihao, Guo Qi
P4.11- Design of an enhanced MEIGA-MetNet dust micro-sensor able to perform gas sensing in Mars atmosphere. #0093
Miguel A. Rodríguez, Alberto Fernández, Francisco Cortés, Fernando López
P5.1- Single Event Transients Generation in Silicon Devices with Pulsed Laser. A comparative Study.
De Paul , Ivan; Bandi , Franco; Segura, Jaume; Bota, Sebastià A. . #0003
P5.2- Performance of Advanced Metering Infrastructure Using Cellular Communication based on Uplink CDMA. #0029
Rodriguez Morocho, Guillermo.
P5.3- Low dose radiation effects on a-Si:H TFTs. #0032
Picos , Rodrigo; Papadopoulos , Nikolaos P.; Lee , Czang-Ho; Lopez-Grifols , Alvaro; Roca , Miquel; Isern , Eugeni; Wong , William S.; Garcia-Moreno, Eugeni.
P5.4- Straightforward Determination of the Effective Mobility-Lifetime Product of Small Molecule Organic Solar Cells. #0048
Gerling Sarabia, Luis Guillermo; Amahdpour, Mehrad; Galindo Lorente, Sergi; Asensi López, José Miguel; Voz Sánchez, Cristobal; Puigdollers González, Joaquim; Alcubilla González, Ramón.
P5.5- Radiation Effects in nanometric SRAMs induced by 18 MeV Protons. #0062
Daniel Malagón Periánez, J.L. Merino, G. Torrens, J. Segura, S.A. Bota
P5.6- Distinguishing conductive filament and non-localized gate conduction in resistive switching devices. #0007
M. Maestro, A. Crespo-Yepes, J. Martin-Martinez, S. Claramunt, R. Rodriguez, M. Nafria, X. Aymerich
P5.7- The Meyer-Neldel Rule in the properties of the deep-level defects present in silicon supersaturated with titanium. #0025
E. Pérez, H. Castán, H. García, S. Dueñas, L. Bailón, D. Montero, R. García-Hernansanz, E. García-Hemme, J. Olea, and G. González-Díaz.
P5.8- Optoelectronic properties of embedded silicon nanocrystals by hyperspectral low-loss EELS.
A. Eljarrat, L. López-Conesa, J. López-Vidrier, S. Hernández, S. Estradé, C. Magén, B. Garrido and F. Peiró. #0046
P5.9- XPS and SEM as diagnosis tools for failure analysis after reliability tests performed on III-V multijunction solar cells. #0076
V. Orlando, M. Gabás, P. Espinet-González, R. Romero, M. Vázquez, S. Bijani, N. Núñez, S. Palanco, C. Algora.
P6.1- High efficiency interdigitated-back-contact c-Si solar cells. #0004
E. Calle, P. Ortega, G. López, I. Martín, D. Carrió, C.Voz, A. Orpella, J. Puigdollers, R. Alcubilla.
P6.2- Effect of doping in the current voltage characteristics of organic diodes . #0012
P. López Varo, J. A. Jiménez Tejada, J. A. López Villanueva, M. J. Deen.
P6.3- Effect of nanofluid conductivity and humidity on the self‐assembly of colloidal crystals by means of electrospray. #0022
Arnau Coll, Sandra Bermejo, Isidro Martin and Luis Castañer.
P6.4- Feasibility of dispensing technology to create local contacts on silicon solar cells.
Elena Navarrete Astorga, Miguel Marín Enríquez, José Ramón Ramos Barrado . #0035
P6.5- Synthesis of PbS/Semiconducting Polymer Nanocomposites Via Thiolate Decomposition.
J.C. Ferrer, S. Fernández de Ávila, J.L. Alonso. #0060
