Modeling and devices simulation
- 13:00 Numerical simulation of a ferromagnetic spin-polarised diode
- Enrique Comesaña Figueroa (Universidade de Santiago de Compostela), Manuel Aldegunde Rodríguez (Universidade de Santiago de Compostela), Gillian Gehring (University of Sheffield), Antonio García Lourerio (Universidade de Santiago de Compostela).
- 13:20 On the computation of high frequency current in nanoelectronic ballistic devices
- Alfonso Alarcón (Universitat Autónoma de Barcelona), Abdelilah Benali (Universitat Autónoma de Barcelona), Guillem Albareda (Universitat Autónoma de Barcelona), Xavier Oriols (Universitat Autónoma de Barcelona).
- 13:40 High Frequency and Noise Model of Gate-All-Around MOSFETs Including Quantum Effects
- Bogdan Nae (Universitat Rovira i Virgili), Antonio Lázaro (Universitat Rovira i Virgili), Benjamín Iñíguez (Universitat Rovira i Virgili).