Poster Sessions Spatial Chat

Session I. Materials: Processing and Characterization

11:30-13:15 Wednesday 9 (Chairperson: F. Campabadal, CSIC)

H1. Materials and processing technology

(ID: 12)
G. López-Rodríguez¹, G. Masmitjà¹, I. Martín¹, J. M. Moreno², M. Rodríguez², J. M. Quero³, J. García³ and P. R. Ortega¹.
¹Universitat Politècnica de Catalunya, Barcelona, Spain, ²Solar MEMS Technologies S.L., Sevilla, Spain, ³Universidad de Sevilla, Spain.
Base and work vacuum pressure influence during sputtering of Al films for sun sensor applications.

(ID: 14)
A. Torrens, G. Masmitjà, R. E. Almache, B. Pusay, E. Ros, G. López-Rodriguez, I. Martín, C. Voz, J. Puigdollers and P. R. Ortega.
Universitat Politècnica de Catalunya, Barcelona, Spain.
Atomic layer deposition of SnO2 films for c-Si solar cells.

(ID: 15)
E. San Andrés¹, R. García¹, E. García¹, R. Barrio², I. Torres², D. Caudevilla¹, D. Pastor¹, J. Olea¹, A. del Prado¹, S. M. Algaidy¹ and F. Pérez¹.
¹Universidad Complutense de Madrid, Spain, ²CIEMAT, Madrid, Spain.
High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells.

(ID: 56)
R. Barrio.
CIEMAT, Madrid, Spain.
Light-trapping improvement of limited-quality silicon wafers for silicon heterojunction solar cell applications.

(ID: 73)
S. Sánchez.
Ceit, Donostia-San Sebastián, Spain.
Nanosecond laser assisted chemical vapor deposition process for the growth of ZnO thin films.

(ID: 80)
K. B. Saddik¹, J. Grandal², B. J. García¹ and S. Fernández-Garrido³.
¹Universidad Autónoma de Madrid, Spain, ²Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Spain, ³Dpto. Física Aplicada, Universidad Autónoma de Madrid, Spain.
Chemical beam epitaxy of GaP1-xNx for the integration of III-V solar cells and light-emitting devices on Si(001).

H3. Characterization and reliability

(ID: 18)
A. Pacheco¹ and D. Jiménez².
¹Dpto. Ingeniería Electrónica., Universitat Autònoma de Barcelona, Spain, ²Universitat Autònoma de Barcelona, Spain.
A contact resistance extraction method of 2D-FET technologies without test structures.

(ID: 29)
M. Maestro-Izquierdo¹, M. B. González¹, P. Martín-Holgado², Y. Morilla², and F. Campabadal¹.
¹IMB-CNM (CSIC), Spain, ²CNA, Sevilla, Spain.
Gamma Radiation Effects on HfO2-based RRAM Devices.

(ID: 32)
V. M. Orejuela.
IES, Universidad Politécnica de Madrid, Spain.
Advances in the development of high efficiency III-V multijunction solar cells on Ge|Si virtual substrates.

(ID: 43)
S. Fernández-Garrido¹, C. Pisador¹, J. Lähnemann², S. Lazic³, A. Ruiz⁴ and A. Redondo-Cubero¹.
¹Dpto. Física Aplicada, Universidad Autónoma de Madrid, Spain, ²Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany, ³Dpto. de Física de Materiales, Universidad Autónoma de Madrid, Spain, ⁴Instituto de Ciencia de Materiales de Madrid, CSIC, Spain.
Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport.

(ID: 45)
A. Ruiz¹, N. Seoane², S. Claramunt¹, A. J. García-Loureiro², M. Porti¹ and M. Nafría¹.
¹Universitat Autònoma de Barcelona, Spain, ²Universidad de Santiago de Compostela, Spain.
Analysis of metal gate workfunction fluctuations on MOSFETs variability using KPFM characterization and device simulation tools.

(ID: 51)
K. B. Saddik¹, J. Lähnemann², M. Pérez¹, M. A. Pampillón¹, J. Grandal³, B. J. García¹ and S. Fernández-Garrido⁴.
¹Universidad Autónoma de Madrid, Spain, ²Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany, ³Intituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Spain, ⁴Dpto. Física Aplicada, Universidad Autónoma de Madrid, Spain.
Luminescence of GaP1-xNx grown by chemical beam epitaxy: correlation with growth conditions.

(ID: 91)
L. Martínez-Herraiz, E. Ruiz, A. F. Braña y J.L. Plaza.
LCC, Madrid, Spain.
Effects of Surface Treatments on the Performance of CdZnTeSe Radiation Detectors.

Session II. Photovoltaic, Optoelectronic and Photonic Devices

10:45-12:00 Thursday 10 (Chairperson: J. Pallares, Universitat Rovira i Virgili)

V2. Photovoltaic and optoelectronic/photonics devices and displays

(ID: 8)
C. Outes¹, E. Fernández¹, N. Seoane², F. Almonacid¹ and A. J. García-Loureiro².
¹Universidad de Jaén, Spain, ²Universidad de Santiago de Compostela, Spain.
Study of Recombination Effects in a Vertical-Tunnel-Junction GaAs Solar Cell.

(ID: 11)
A. A. A. Torimtubun, J. Pallares and L. F. Marsal.
Universitat Rovira i Virgili, Tarragona, Spain.
Effect of Thermal Annealing on the Performance of PTB7-Th:PC70BM-Based Ternary Organic Solar Cells.

(ID: 13)
J. Olea, S. Algaidy, D. Caudevilla, E. García-Hemme, A. del Prado, D. Pastor, R. García-Hernansanz, F. Zenteno, E. San-Andrés, G. González-Díaz, I. Mártil, D. Montero, P. Gomez, J. Gonzalo, and J. Siegel.
Universidad Complutense de Madrid, Spain.
Advances on GaP:Ti material and solar cells.

(ID: 30)
M. Fisse¹, L. López¹, L. Yedra¹, F. Peiró¹, S. Estradé¹, S. Paetel², R. Fonoll-Rubio³, M. Guc³ and V. lzquierdo-Roca³.
¹Universitat de Barcelona, Spain, ²Zentrum für Sonnenenergie und Wasserstoff-Forschung, Stuttgart, Germany, ³Institut de Recerca en Energia de Catalunya, Barcelona, Spain.
Characterization of thin CIGS solar cells by electron microscopy techniques.

(ID: 38)
G. López-Rodríguez, E. Ros, P. R. Ortega, C. Voz, J. Puigdollers and I. Martín.
Universitat Politècnica de Catalunya, Barcelona, Spain.
Thin c-Si Solar Cells Based on VOx Heterojunctions.

(ID: 47)
S. Algaidy¹, J. Olea¹, D. Caudevilla¹, E. García-Hemme¹, A. del Prado¹, D. Pastor¹, D. Montero¹, R. García-Hernansanz¹, E. San Andrés¹, G. González-Díaz¹, I. Mártil¹, J. Siegel², J. Gonzalo², M. Wang³ and Y. Berencén³.
¹Universidad Complutense de Madrid, Spain, ²IO-CSIC, Madrid, Spain, ³Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany.
Recrystallization of GaAs supersaturated with Ti.

(ID: 52)
L. K. Acosta, J. Ferre-Borrull and L. F. Marsal.
Universitat Rovira i Virgili, Tarragona, Spain.
Progress in Engineering Photonic Structures based on Nanoporous Anodic Alumina.

(ID: 55)
I. Torres.
CIEMAT, Madrid, Spain.
Silicon heterojunction solar cells with Graphene-modified front transparent conductive electrodes.

(ID: 57)
R. Barrio.
CIEMAT, Madrid, Spain.
Laser Fired Contacts in multicrytalline silicon solar cells.

(ID: 61)
L. F. Marsal¹ and J. G. Sánchez².
¹Universitat Rovira i Virgili, Tarragona, Spain, ²ICIQ, Tarragona, Spain.
Bulk-Heterojunction Organic Solar Cells Towards 20% of Power Conversion Efficiency.

(ID: 64)
E. García, D. Caudevilla, S. M. Algaidy, F. Pérez, R. García, J. Olea, D. Pastor, A. del Prado, E. San Andrés, I. Mártil and G. González.
Universidad Complutense de Madrid, Spain.
Unveiling the optoelectronic mechanisms ruling Ti hyperdoped Si photodiodes.

(ID: 66)
E. López-Aymerich.
Universitat de Barcelona, Spain.
Simulations and nanofabrication of photonic crystals based on silicon pillars for mechanical biosensors.

(ID: 74)
S. González-Torres.
Universitat de Barcelona, Spain.
Inkjet-printed ZnO and NiOx: layer and device characterization for optoelectronics.

(ID: 81)
R. Izquierdo-López, J. Pedrós, R. Fandan, A. Boscá and F. Calle.
Instituto de Sistemas Optoelectrónicos y Microtecnología, Dpto. de Ingeniería Electrónica, Universidad Politécnica de Madrid, Spain.
SAW-driven plasmons in graphene heterostructures for fingerprinting ultrathin polymer layers.

(ID: 87)
B. Galiana¹, R. de la Cruz¹, M. Modesto¹, C. Kanvinda-Malu², S. Athanasopoulos¹, E. Salas¹, E. García-Tabarés¹, B. García¹ and J. E. Muños¹.
¹Universidad Carlos III de Madrid, Spain, ²Universidad Rey Juan Carlos, Madrid, Spain.
Improvement of III-V solar cells by using oxides doped with rare earths.

V1. Sensors, actuators and micro/nano systems

(ID: 25)
C. Reig¹, F. Pardo¹, J. A. Boluda¹, F. Vegara¹, M. D. Cubells¹, J. Sanchis¹, S. Abrunhosa² and S. Cardoso².
¹Universidad de Valencia, Spain, ²INESC-Microsystems and Nanotechnologies, Lisbon, Portugal.
Advanced Giant Magnetoresistance (GMR) sensors for Selective-Change Driven (SCD) circuits.

Session III. Device Modelling, Simulation and Beyond

12:00-13:15 Thursday 10 (Chairperson: S. Dueñas, Universidad de Valladolid)

H2. Device modelling and simulation

(ID: 3)
A. E. Atamuratov¹, B. O. Jabbarova¹, M. M. Khalilloev¹, A. Yusupov² and A. G. J. Loureiro³.
¹Urgench State University, Uzbekistan, ²Tashkent University of Information Technologies, Uzbekistan, ³Universidad de Santiago de Compostela, Spain.
Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries.

(ID: 7)
A. J. Pérez-Ávila¹, E. Pérez², J. B. Roldán¹, C. Wenger² and F. Jiménez¹.
¹Universidad de Granada, Spain, ²IHP.
Multilevel memristor based matrix-vector multiplication: influence of the discretization method.

(ID: 19)
F. Pasadas¹, T. Grour², A. Medina-Rull³, M. Najari⁴, E. G. Marin³, A. Toral-López³, M. C. Pardo³, F. J. G. Ruiz³, A. Godoy³, L. Elmir² and D. Jiménez¹.
¹Universitat Autònoma de Barcelona, Spain, ²GEEE, ³Universidad de Granada, Spain, ⁴Jazan University, Saudi Arabia.
Modeling of ion-sensitive FETs based on 2D-TMDs.

(ID: 31)
A. Valera.
Universidad de Jaén, Spain.
Modelling and potential of hybrid micro-scaling MJ solar cell and thermoelectric generator.

(ID: 37)
C. Santa Cruz¹, G. Vinuesa¹, O. G. Osorio¹, H. García¹, B. Sahelices¹, H. Castán¹, S. Dueñas¹, J. Jiménez¹, M. Bargalló² and F. Campabadal².
¹Universidad de Valladolid, Spain, ²IMB-CNM (CSIC), Barcelona, Spain.
Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes.

(ID: 40)
N. Mavredakis¹, A. Pacheco², P. C. Feijoo¹ and D. Jiménez¹.
¹Universitat Autònoma de Barcelona, Spain, ²Dpto. Ingeniería Electrónica, Universitat Autònoma de Barcelona, Spain.
Analysis of traps-related effects hindering GFETs performance.

(ID: 53)
J. Cuesta-Lopez, A. Toral-Lopez, M. C. Pardo, E. G. Marin, F. G. Ruiz, F. Pasadas and A. Godoy.
Universidad de Granada, Spain.
Variability assessment of the performance of MoS2 based BioFETs.

(ID: 65)
P. C. Feijoo¹, F. Pasadas¹, A. Pacheco², F. Alveiro¹ and D. Jiménez¹.
¹Universitat Autònoma de Barcelona, Spain, ²Dpto. Ingeniería Electrónica, Universitat Autònoma de Barcelona, Spain.
Impact of Self-Heating on Small-Signal Parameters of Graphene Field-Effect Transistors over a Wide Frequency Range.

(ID: 76)
F. A. Chaves, P. C. Feijoo and D. Jiménez.
Universitat Autònoma de Barcelona, Spain.
Electrically and Chemically Doped 2D lateral pn junctions: Equilibrium and out-of-the equilibrium properties.

(ID: 90)
J. J. Santaella¹, F. M. Gómez-Campos², S. Rodríguez-Bolívar² and K. Critchley³.
¹VALEO, Paris, France, ²Universidad de Granada, Spain, ³University of Leeds, United Kingdom.
Electrical simulation of a QLED device based on quantum dots using the Transfer Hamiltonian approach.

V4. New device concepts: quantum devices, nano-devices, RF, microwave and power devices

(ID: 2)
G. González¹, M. Bargalló², F. Jiménez¹, F. Campabadal² and J. B. Roldán¹.
¹Universidad de Granada, Spain, ²IMB-CNM (CSIC), Barcelona, Spain.
RTN study of TiN/Ti/HfO2/Pt resistive switching devices based on neural network analysis.

(ID: 10)
J. G. Fernández¹, N. Seoane¹, K. Kalna² and A. J. García-Loureiro¹.
¹Universidad de Santiago de Compostela, Spain, ²Swansea University, United Kingdom.
Threshold voltage variability study in a 12 nm gate length Nanosheet FET.

(ID: 22)
M. Saludes-Tapia¹, S. Poblador¹, F. Campabadal², J. Suñé¹, E. Miranda¹ and M. Bargalló².
¹Universitat Autònoma de Barcelona, Spain, ²IMB-CNM (CSIC), Barcelona, Spain.
Complementary Resistive Switching in Anti-Serially Connected HfO2-based Memristors.

(ID: 33)
J. Martínez.
ISOM, Universidad Politécnica de Madrid, Spain.
Towards a hybrid graphene device for Green Energy.

(ID: 59)
G. Paz¹, I. Íñiguez de la Torre¹, H. Sánchez¹, V. Hoel², Y. Cordier², T. González¹ and J. Mateos¹.
¹Universidad de Salamanca, Spain, ²IEMN, France.
GaN-based HEMTs operating as zero-bias microwave detectors at low temperature.

(ID: 84)
F. M. Gómez-Campos.
Universidad de Granada, Spain.
Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids.

Session IV. Sensors, Actuators and Biomedical Devices

11:30-13:15 Friday 11 (Chairperson: C. García Núñez, University of the West of Scotland)

V1. Sensors, actuators and micro/nano systems

(ID: 4)
J. M. Moreno¹, M. Rodríguez¹, P. R. Ortega² and J. M. Quero³.
¹Solar MEMS Technologies S.L., Sevilla, Spain, ²Universitat Politècnica de Catalunya, Barcelona, Spain, ³Universidad de Sevilla, Spain.
In orbit data of miniaturized 2-axis sun sensors for attitude control applications in spacecrafts.

(ID: 6)
A. Rodríguez, D. Vega, D. Cardador and D. Segura.
Universitat Politècnica de Catalunya, Spain.
Study of the performance impact by fabrication imperfections in electrochemically etched macroporous silicon photonic crystals.

(ID: 17)
M. Tomić, I. Gràcia, E. Figueras, C. Cané and S. Vallejos.
IMB-CNM (CSIC), Barcelona, Spain.
ZnO nanorods and their modification with Au nanoparticles for UV-light activated gas sensing.

(ID: 36)
O. Ferrer.
IMB-CNM (CSIC), Barcelona, Spain.
3D Detectors for timing applications.

(ID: 42)
M. Pelayo¹, K. McAughey², D. Gibson¹, D. Hughes² and C. García¹.
¹University of the West of Scotland, United Kingdom, ²Novosound, Scotland, United Kingdom.
Glancing Angle Deposition of Nanostructured ZnO Thin Films for Ultrasonics.

(ID: 44)
C. Pérez-González.
Universidad de Valladolid, Spain.
Development of a potentiometric bioelectronic tongue modified with gold nanoparticles for dairy industry.

(ID: 54)
J. Gómez-Suárez, F. Meléndez, P. Arroyo, S. Rodríguez, S. Palomeque, J. I. Suárez and J. Lozano.
Universidad de Extremadura, Spain.
Detection of 2,4,6 Trichloroanisole at low concentrations by means of machine olfaction.

(ID: 58)
M. Pozo-Gómez, J. D. Aguilera-Martín, P. de la Presa, C. Cruz, P. Marín, M. C. Horrillo and D. Matatagui.
Instituto de Tecnologías Físicas y de Información, CSIC, Madrid, Spain.
Modeling and simulation of a magnonic gas sensor to detect diseases in human breath.

(ID: 67)
C. Sánchez¹, J. P. Santos², A. Azabal¹, S. Ruiz-Valdepeñas¹, J. Lozano³, I. Sayago² and J. L. San Jurjo².
¹Up Devices and Technologies, Madrid, Spain, ²ITEF-CSIC, Madrid, Spain, ³Universidad de Extremadura, Spain.
Automation and optimization device for the fabrication of sensors with nanomaterials.

(ID: 71)
A. Doblas.
IMB-CNM (CSIC), Barcelona, Spain.
Technology Developments on iLGAD Sensors at IMB-CNM.

(ID: 77)
D. Estrada¹, M. Dolcet¹, R. Soriano¹, J. Santander¹, M. Salleras¹, L. Fonseca¹, J. M. Sojo², A. Morata² and A. Tarancon².
¹IMB-CNM (CSIC), Barcelona, Spain, ²IREC, Ciudad Real, Spain.
Highly-packed arrangement of an all-Si based thermoelectric microgenerator.

(ID: 82)
A. Doblas.
IMB-CNM (CSIC), Barcelona, Spain.
Proton Low Gain Avalanche Detector (pLGAD) for Low Energy Particles Detection.

(ID: 83)
C. Iain Douglas, C. García Núñez, D. Gibson and M. Caffio.
University of the West of Scotland, United Kingdom.
Development of a Highly Sensitive and Flexible Graphene Foam Based Pressure Sensors.

V3. Biomedical devices and Lab-on-chip

(ID: 69)
L. Lefaix¹, A. Blanquer², L. Bacakova², J. Esteve¹ and G. Murillo¹.
¹IMB-CNM (CSIC), Barcelona, Spain, ²Institute of Physiology of the Czech Academy of Sciences, Prague, Czech Republic.
Development of hybrid piezoelectric microdevices for bioapplications.

(ID: 86)
J. A. Fontanilla and A. Luque.
Universidad de Sevilla, Spain.
Low-cost voltage amplifier for biological signal acquisition through generic micro-electrode array.

(ID: 88)
J. D. Urbano-Gámez, C. Aracil, F. Perdigones, J. A. Fontanilla and J. M. Quero.
Universidad de Sevilla, Spain.
Towards a 3D-Printed and Autonomous Culture Platform Integrated with Commercial Microelectrode Arrays.